CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node advancing this energy-saving technology closer to commercialisation ...
CEA-Leti research engineers demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into back-end-of-line (BEOL) at 22nm FD-SoI technology node.
CEA-Leti demonstrated 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node. It utilizes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small ...
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