Upcoming 14A and 10A process nodes will use high-NA EUV anamorphic scanners, which will require two stitched half-fields to achieve the equivalent wafer exposure area of previous-generation scanners, ...

As the complexity of IC designs continues to grow, moving critical checks earlier in the design cycle helps designers identify and resolve issues before they escalate, streamlining the overall ...

(Nanowerk Spotlight) Advanced electronics manufacturing demands precise control over multiple layers of functional materials. Each layer - whether conducting electricity, emitting light, or processing ...

Pattern matching is best known for its use in detecting lithographic hotspots, but it’s also widely used across all physical verification flows, and has expanded into design-for-manufacturing (DFM) ...